JPH0224389B2 - - Google Patents

Info

Publication number
JPH0224389B2
JPH0224389B2 JP59217103A JP21710384A JPH0224389B2 JP H0224389 B2 JPH0224389 B2 JP H0224389B2 JP 59217103 A JP59217103 A JP 59217103A JP 21710384 A JP21710384 A JP 21710384A JP H0224389 B2 JPH0224389 B2 JP H0224389B2
Authority
JP
Japan
Prior art keywords
light
conductivity type
metal film
layer
receiving element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59217103A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6195581A (ja
Inventor
Keiji Kamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59217103A priority Critical patent/JPS6195581A/ja
Priority to DE8585107837T priority patent/DE3570020D1/de
Priority to EP85107837A priority patent/EP0178383B1/en
Priority to US06/749,382 priority patent/US4712017A/en
Publication of JPS6195581A publication Critical patent/JPS6195581A/ja
Publication of JPH0224389B2 publication Critical patent/JPH0224389B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
    • H10F30/245—Bipolar phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
JP59217103A 1984-10-16 1984-10-16 光結合素子 Granted JPS6195581A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP59217103A JPS6195581A (ja) 1984-10-16 1984-10-16 光結合素子
DE8585107837T DE3570020D1 (en) 1984-10-16 1985-06-25 Photocoupler device
EP85107837A EP0178383B1 (en) 1984-10-16 1985-06-25 Photocoupler device
US06/749,382 US4712017A (en) 1984-10-16 1985-06-27 Photocoupler device having reflecting surface enhance signal transmission

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59217103A JPS6195581A (ja) 1984-10-16 1984-10-16 光結合素子

Publications (2)

Publication Number Publication Date
JPS6195581A JPS6195581A (ja) 1986-05-14
JPH0224389B2 true JPH0224389B2 (en]) 1990-05-29

Family

ID=16698894

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59217103A Granted JPS6195581A (ja) 1984-10-16 1984-10-16 光結合素子

Country Status (4)

Country Link
US (1) US4712017A (en])
EP (1) EP0178383B1 (en])
JP (1) JPS6195581A (en])
DE (1) DE3570020D1 (en])

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57102077A (en) * 1980-12-16 1982-06-24 Mitsubishi Electric Corp Photo coupling device by photo semiconductor element and optical fiber
JPS6351681A (ja) * 1986-08-20 1988-03-04 Agency Of Ind Science & Technol 半導体装置
DE3633181C2 (de) * 1986-09-30 1998-12-10 Siemens Ag Reflexlichtschranke
JPH0241460U (en]) * 1988-09-09 1990-03-22
US4980568A (en) * 1989-05-22 1990-12-25 Hewlett-Packard Company Optical isolator having high voltage isolation and high light flux light guide
US5049810A (en) * 1989-09-22 1991-09-17 Landis & Gyr Metering, Inc. Watt-hour meter cover with battery hatch reset switch and optical communication port
US5245198A (en) * 1990-10-12 1993-09-14 Sharp Kabushiki Kaisha Optoelectronic device, metal mold for manufacturing the device and manufacturing method of the device using the metal mold
US5329131A (en) * 1991-05-17 1994-07-12 U.S. Philips Corporation Opto-electronic coupler having improved moisture protective housing
DE4311530A1 (de) * 1992-10-02 1994-04-07 Telefunken Microelectron Optoelektronisches Bauelement mit engem Öffnungswinkel
US5479051A (en) * 1992-10-09 1995-12-26 Fujitsu Limited Semiconductor device having a plurality of semiconductor chips
DE59405248D1 (de) * 1993-09-23 1998-03-19 Siemens Ag Optokoppler und Verfahren zu dessen Herstellung
US5647034A (en) * 1994-10-03 1997-07-08 Matsushita Electric Works, Ltd. Operation displaying semiconductor switch
US5614131A (en) * 1995-05-01 1997-03-25 Motorola, Inc. Method of making an optoelectronic device
JP3970377B2 (ja) 1997-04-25 2007-09-05 沖電気工業株式会社 光半導体装置およびその製造方法
JP4117868B2 (ja) * 1999-11-22 2008-07-16 シャープ株式会社 光結合素子
DE19963806C2 (de) * 1999-12-30 2002-02-07 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen einer Leuchtdioden-Weißlichtquelle, Verwendung einer Kunststoff-Preßmasse zum Herstellen einer Leuchtioden-Weißlichtquelle und oberflächenmontierbare Leuchtdioden-Weißlichtquelle
DE10131698A1 (de) * 2001-06-29 2003-01-30 Osram Opto Semiconductors Gmbh Oberflächenmontierbares strahlungsemittierendes Bauelement und Verfahren zu dessen Herstellung
JP4282392B2 (ja) * 2003-07-11 2009-06-17 株式会社東芝 光半導体装置及びその製造方法
JP4180088B2 (ja) * 2006-06-09 2008-11-12 シャープ株式会社 光結合素子および電子機器
US7791084B2 (en) * 2008-01-09 2010-09-07 Fairchild Semiconductor Corporation Package with overlapping devices
US7973393B2 (en) 2009-02-04 2011-07-05 Fairchild Semiconductor Corporation Stacked micro optocouplers and methods of making the same
JP2013175561A (ja) * 2012-02-24 2013-09-05 Toshiba Corp 光結合装置
JP5779155B2 (ja) * 2012-08-28 2015-09-16 株式会社東芝 半導体装置
US20140119691A1 (en) * 2012-10-29 2014-05-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Opto-coupler with light guide
TWI594033B (zh) * 2013-08-28 2017-08-01 趙寶龍 光耦合器
US10283699B2 (en) * 2016-01-29 2019-05-07 Avago Technologies International Sales Pte. Limited Hall-effect sensor isolator

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3859536A (en) * 1974-01-07 1975-01-07 Corning Glass Works Optical communication system source-detector pair
US4124860A (en) * 1975-02-27 1978-11-07 Optron, Inc. Optical coupler
US4114177A (en) * 1975-05-01 1978-09-12 Bell Telephone Laboratories, Incorporated Optically coupled device with diffusely reflecting enclosure
JPS583386B2 (ja) * 1975-10-11 1983-01-21 株式会社日立製作所 ソウホウコウセイホトサイリスタ
JPS5314587A (en) * 1976-07-26 1978-02-09 Toshiba Corp Photo coupler
JPS5467393A (en) * 1977-11-09 1979-05-30 Hitachi Ltd High dielectric strength semiconductor element
US4179619A (en) * 1977-12-02 1979-12-18 General Electric Company Optocoupler having internal reflection and improved isolation capabilities
US4268756A (en) * 1978-11-13 1981-05-19 Trw Inc. Optical transceiver
JPS5575170U (en]) * 1978-11-20 1980-05-23
US4412135A (en) * 1979-03-23 1983-10-25 Sharp Kabushiki Kaisha Photo coupler device molding including filler particles
JPS5548982A (en) * 1979-09-21 1980-04-08 Hitachi Ltd Photo-combination semiconductor switching device
JPS5819030A (ja) * 1981-07-27 1983-02-03 Toshiba Corp 光結合半導体装置
JPS5994476A (ja) * 1983-10-03 1984-05-31 Sharp Corp 光結合半導体装置

Also Published As

Publication number Publication date
EP0178383A3 (en) 1986-10-01
JPS6195581A (ja) 1986-05-14
US4712017A (en) 1987-12-08
EP0178383A2 (en) 1986-04-23
DE3570020D1 (en) 1989-06-08
EP0178383B1 (en) 1989-05-03

Similar Documents

Publication Publication Date Title
JPH0224389B2 (en])
US4124860A (en) Optical coupler
US5925898A (en) Optoelectronic transducer and production methods
US4857746A (en) Method for producing an optocoupler
JP3312049B2 (ja) 半導体発光装置
US4745451A (en) Photodetector array and a method of making same
JPH06318731A (ja) 半導体発光装置
JPH0677518A (ja) 半導体受光素子
JP2981361B2 (ja) フォトカプラ
JPH0639464Y2 (ja) 発光ダイオード
JPH10242506A (ja) 光学レンズ機能付き半導体デバイス
JPH06104472A (ja) 太陽光を利用した発電装置
JPH0411787A (ja) 半導体受光装置
CN222394822U (zh) 一种传感器器件
JP2664142B2 (ja) 受光素子の製造方法
JPS6125260Y2 (en])
JPS63226971A (ja) 光電素子
JPH04322467A (ja) 固体撮像装置
JPH0567800A (ja) 光半導体装置
CN117352503A (zh) Led光电耦合器件及其制造方法及led光电耦合器件封装结构
JPH11163383A (ja) 半導体受光素子
JPH0427171A (ja) 半導体装置
JP2001308366A (ja) フォトダイオード
CN117542906A (zh) 一种光敏元件及其制造方法、光敏探测器
JPS63190388A (ja) 半導体集積回路

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term